PSMN027-100BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

4.9V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

37A Tc

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Drain-source On Resistance-Max :

0.0268Ohm

Pin Count :

3

Terminal Position :

Single

Number of Terminations :

2

Mounting Type :

Surface Mount

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

29.6 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

11.4ns

Power Dissipation-Max :

103W Tc

Max Dual Supply Voltage :

100V

Number of Elements :

1

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

59 mJ

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Fall Time (Typ) :

8.9 ns

Case Connection :

DRAIN

Published :

2014

Turn On Delay Time :

14.4 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

26.8m Ω @ 15A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

148A

Continuous Drain Current (ID) :

37A

Input Capacitance (Ciss) (Max) @ Vds :

1624pF @ 50V