PSMN026-80YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Fall Time (Typ) :

5 ns

Power Dissipation :

74W

Continuous Drain Current (ID) :

34A

Published :

2009

Turn-Off Delay Time :

26 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 5A, 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Terminal Position :

Single

Vgs (Max) :

±20V

Max Dual Supply Voltage :

80V

Peak Reflow Temperature (Cel) :

260

Length :

6.35mm

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

74W Tc

Case Connection :

DRAIN

Radiation Hardening :

No

Weight :

4.535924g

Drain to Source Breakdown Voltage :

80V

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Digi-Reel®

ECCN Code :

EAR99

Number of Pins :

4

Surface Mount :

yes

Rise Time :

6ns

Avalanche Energy Rating (Eas) :

32 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Resistance :

27.5mOhm

Height :

6.35mm

Transistor Element Material :

SILICON

FET Type :

N-Channel

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 40V

Number of Terminations :

4

Width :

6.35mm

Package / Case :

SC-100, SOT-669

Gate to Source Voltage (Vgs) :

20V