PSMN025-80YLX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G4

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.1V @ 1mA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

DS Breakdown Voltage-Min :

80V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

45.4 mJ

Published :

2016

Package / Case :

SC-100, SOT-669

Drain-source On Resistance-Max :

0.027Ohm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

25m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2703pF @ 25V

Transistor Element Material :

SILICON

Pin Count :

4

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

MO-235

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Reference Standard :

IEC-60134

Continuous Drain Current (ID) :

37A

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

17.1nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

150A

Power Dissipation-Max :

95W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V