PSMN025-80YLX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Form :

Gull wing

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

25m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

17.1nC @ 5V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Pin Count :

4

Drain-source On Resistance-Max :

0.027Ohm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Avalanche Energy Rating (Eas) :

45.4 mJ

Vgs (Max) :

±20V

Published :

2016

Reference Standard :

IEC-60134

Mount :

Surface Mount

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

80V

JESD-30 Code :

R-PSSO-G4

Pulsed Drain Current-Max (IDM) :

150A

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Continuous Drain Current (ID) :

37A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

4

Package / Case :

SC-100, SOT-669

Input Capacitance (Ciss) (Max) @ Vds :

2703pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

80V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

MO-235

Mounting Type :

Surface Mount

Power Dissipation-Max :

95W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks