PSMN020-30MLCX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

31.8A Tc

Threshold Voltage :

1.62V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 15V

Pin Count :

8

Element Configuration :

Single

Number of Pins :

8

Terminal Form :

Gull wing

Fall Time (Typ) :

5.1 ns

Number of Channels :

1

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Number of Elements :

1

Surface Mount :

yes

Vgs (Max) :

±20V

Number of Terminations :

4

Transistor Application :

SWITCHING

Turn-Off Delay Time :

10.1 ns

Radiation Hardening :

No

Max Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Rise Time :

7.2ns

JESD-30 Code :

R-PSSO-G4

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Published :

2012

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

31.8A

Drain-source On Resistance-Max :

0.027Ohm

Power Dissipation-Max :

33W Tc

Rds On (Max) @ Id, Vgs :

18.1m Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

7.7 mJ

Mounting Type :

Surface Mount

Package / Case :

SOT-1210, 8-LFPAK33

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Turn On Delay Time :

6.1 ns

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V