PSMN020-100YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 50V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pin Count :

4

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

71 mJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

4

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

20.5m Ω @ 15A, 10V

Package / Case :

SC-100, SOT-669

Continuous Drain Current (ID) :

43A

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0205Ohm

Number of Elements :

1

JEDEC-95 Code :

MO-235

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

172A

Power Dissipation-Max :

106W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant