PSMN019-100YLX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

226A

DS Breakdown Voltage-Min :

100V

Published :

2016

JEDEC-95 Code :

MO-235

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

167W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

IEC-60134

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Pin Count :

4

Package / Case :

SC-100, SOT-669

Additional Feature :

AVALANCHE RATED

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

94.1 mJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5085pF @ 25V

JESD-30 Code :

R-PSSO-G4

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

18m Ω @ 15A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

56A

Drain-source On Resistance-Max :

0.019Ohm

Terminal Position :

Single

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Gate Charge (Qg) (Max) @ Vgs :

72.4nC @ 10V