PSMN018-100ESFQ
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- Mfr.Part #
- PSMN018-100ESFQ
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- NEXPERIA PSMN018 - NEXTPOWER 100
- Stock
- 4,976
- In Stock ：
- 4,976
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 21.4nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 7V 10V
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 15A, 10V
- Package / Case :
- TO-220-3, Short Tab
- FET Type :
- N-Channel
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1482pF @ 50V
- Current - Continuous Drain (Id) @ 25°C :
- 53A Ta
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Power Dissipation-Max :
- 111W Ta
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- PSMN018-100ESFQ
N-Channel Tube 18m Ω @ 15A, 10V ±20V 1482pF @ 50V 21.4nC @ 10V 100V TO-220-3, Short Tab
PSMN018-100ESFQ Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1482pF @ 50V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (7V 10V) reduces this device's overall power consumption.
PSMN018-100ESFQ Features
a 100V drain to source voltage (Vdss)
PSMN018-100ESFQ Applications
There are a lot of Nexperia USA Inc.
PSMN018-100ESFQ applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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