PSMN016-100PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

36 ns

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

288A

Pin Count :

3

Number of Terminations :

3

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

148W

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Max Dual Supply Voltage :

100V

Radiation Hardening :

No

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

96A

Continuous Drain Current (ID) :

57A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

18 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Turn On Delay Time :

17 ns

Factory Lead Time :

12 Weeks

Published :

2011

Power Dissipation-Max :

148W Tc

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Surface Mount :

No

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

57A Tj

Input Capacitance (Ciss) (Max) @ Vds :

2404pF @ 50V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

16m Ω @ 15A, 10V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Rise Time :

23ns