PSMN015-60PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

27 ns

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

14.8m Ω @ 15A, 10V

Fall Time (Typ) :

7 ns

Continuous Drain Current (ID) :

50A

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

FET Type :

N-Channel

Max Dual Supply Voltage :

60V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

Terminal Finish :

Tin (Sn)

Pin Count :

3

Published :

2011

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 30V

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

20.9nC @ 10V

Length :

6.35mm

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Weight :

9.071847g

Power Dissipation :

86W

Number of Terminations :

3

Packaging :

Tube

Surface Mount :

No

Case Connection :

DRAIN

Width :

6.35mm

Vgs(th) (Max) @ Id :

4V @ 1mA

Height :

6.35mm

Number of Pins :

3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Power Dissipation-Max :

86W Tc

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Element Material :

SILICON

Number of Elements :

1

Avalanche Energy Rating (Eas) :

44 mJ