PSMN015-110P,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

FET Type :

N-Channel

HTS Code :

8541.29.00.75

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

15m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Pulsed Drain Current-Max (IDM) :

240A

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

110V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

110V

Packaging :

Tube

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.015Ohm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Case Connection :

DRAIN

Published :

2009

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

320 mJ

Series :

TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE