PSMN015-100YLX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

MO-235

Pin Count :

4

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Published :

2016

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

274A

Drain-source On Resistance-Max :

0.015Ohm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 20A, 10V

Avalanche Energy Rating (Eas) :

110 mJ

Power Dissipation-Max :

195W Tc

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G4

Continuous Drain Current (ID) :

69A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6139pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

86.3nC @ 10V

FET Type :

N-Channel

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

IEC-60134

Package / Case :

SC-100, SOT-669

Packaging :

Tape and Reel (TR)