PSMN015-100B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Drain Current-Max (Abs) (ID) :

75A

Published :

2009

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Pulsed Drain Current-Max (IDM) :

240A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Surface Mount :

yes

Drain-source On Resistance-Max :

0.015Ohm

Series :

TrenchMOS™

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

15m Ω @ 25A, 10V

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Terminations :

2

Terminal Form :

Gull wing

Power Dissipation-Max :

300W Tc

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

320 mJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

245

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V