PSMN014-80YLX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

IEC-60134

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

250A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Drain-source On Resistance-Max :

0.015Ohm

Number of Terminations :

4

JESD-30 Code :

R-PSSO-G4

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

147W Tc

JEDEC-95 Code :

MO-235

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

62A

Input Capacitance (Ciss) (Max) @ Vds :

4640pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

28.9nC @ 5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

80V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

80V

Rds On (Max) @ Id, Vgs :

14m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SC-100, SOT-669

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Avalanche Energy Rating (Eas) :

79.6 mJ

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount