PSMN014-80YLX
- Mfr.Part #
- PSMN014-80YLX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 62A LFPAK56
- Stock
- 5,145
- In Stock :
- 5,145
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 28.9nC @ 5V
- Continuous Drain Current (ID) :
- 62A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 15A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.015Ohm
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Reference Standard :
- IEC-60134
- JESD-30 Code :
- R-PSSO-G4
- DS Breakdown Voltage-Min :
- 80V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 80V
- Pin Count :
- 4
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 147W Tc
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 79.6 mJ
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 4640pF @ 25V
- Transistor Application :
- SWITCHING
- Published :
- 2016
- Pulsed Drain Current-Max (IDM) :
- 250A
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- JEDEC-95 Code :
- MO-235
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- SC-100, SOT-669
- Datasheets
- PSMN014-80YLX

N-Channel Tape & Reel (TR) 14m Ω @ 15A, 10V ±20V 4640pF @ 25V 28.9nC @ 5V 80V SC-100, SOT-669
PSMN014-80YLX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 79.6 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4640pF @ 25V.This device conducts a continuous drain current (ID) of 62A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 250A.A normal operation of the DS requires keeping the breakdown voltage above 80V.This transistor requires a drain-source voltage (Vdss) of 80V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
PSMN014-80YLX Features
the avalanche energy rating (Eas) is 79.6 mJ
a continuous drain current (ID) of 62A
based on its rated peak drain current 250A.
a 80V drain to source voltage (Vdss)
PSMN014-80YLX Applications
There are a lot of Nexperia USA Inc.
PSMN014-80YLX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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