PSMN013-100ES,127
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- Mfr.Part #
- PSMN013-100ES,127
- Manufacturer
- Nexperia
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 68A I2PAK
- Stock
- 11,636
- In Stock ：
- 11,636
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 68A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3195pF @ 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 90V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 170W
- Number of Pins :
- 3
- Fall Time (Typ) :
- 24 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Current - Continuous Drain (Id) @ 25°C :
- 68A Tc
- Vgs (Max) :
- ±20V
- Published :
- 2011
- Factory Lead Time :
- 20 Weeks
- Rds On (Max) @ Id, Vgs :
- 13.9m Ω @ 15A, 10V
- Rise Time :
- 25ns
- Pin Count :
- 3
- Max Dual Supply Voltage :
- 100V
- Power Dissipation-Max :
- 170W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 52.5 ns
- FET Type :
- N-Channel
- Turn On Delay Time :
- 20.7 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- PSMN013-100ES,127
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N-Channel Tube 13.9m Ω @ 15A, 10V ±20V 3195pF @ 50V 59nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN013-100ES,127 Overview
A device's maximum input capacitance is 3195pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 68A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=90V, and this device has a drain-to-source breakdown voltage of 90V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
PSMN013-100ES,127 Features
a continuous drain current (ID) of 68A
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 52.5 ns
PSMN013-100ES,127 Applications
There are a lot of Nexperia USA Inc.
PSMN013-100ES,127 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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