PSMN013-100BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3195pF @ 50V

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

170W Tc

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

272A

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

127 mJ

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

68A Tc

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

68A

Terminal Form :

Gull wing

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0139Ohm

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING