PSMN012-80BS,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation :

148W

Current - Continuous Drain (Id) @ 25°C :

74A Tc

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

295A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

16ns

Turn-Off Delay Time :

33 ns

Turn On Delay Time :

19 ns

Terminal Position :

Single

Continuous Drain Current (ID) :

74A

Fall Time (Typ) :

6 ns

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

73V

Surface Mount :

yes

Mounting Type :

Surface Mount

Published :

2012

Pin Count :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

148W Tc

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2782pF @ 12V

Max Dual Supply Voltage :

80V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

JESD-609 Code :

e3