PSMN012-60YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

89W Tc

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Continuous Drain Current (ID) :

59A

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MO-235

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

71 mJ

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

11.1m Ω @ 15A, 10V

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

28.4nC @ 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1685pF @ 30V

Number of Pins :

4

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

236A

Published :

2010

Package / Case :

SC-100, SOT-669

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Surface Mount :

yes

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0111Ohm

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Terminal Form :

Gull wing

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)