PSMN011-60MSX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Number of Elements :

1

Mounting Type :

Surface Mount

Published :

2013

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

232A

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Terminal Form :

Gull wing

Pin Count :

8

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G4

Power Dissipation-Max :

91W Tc

Turn-Off Delay Time :

16.9 ns

Contact Plating :

Tin

Package / Case :

SOT-1210, 8-LFPAK33

Rds On (Max) @ Id, Vgs :

11.3m Ω @ 15A, 10V

Max Dual Supply Voltage :

60V

Avalanche Energy Rating (Eas) :

50.6 mJ

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Case Connection :

DRAIN

Surface Mount :

yes

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

26 Weeks

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

9.18 ns

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

61A

Number of Pins :

8

Rise Time :

8.46ns

Input Capacitance (Ciss) (Max) @ Vds :

1368pF @ 30V

Turn On Delay Time :

6.7 ns