PSMN009-100B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

HTS Code :

8541.29.00.75

Pin Count :

3

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.0088Ohm

Case Connection :

DRAIN

Max Dual Supply Voltage :

100V

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Continuous Drain Current (ID) :

75A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

230W

Turn-Off Delay Time :

120 ns

Rise Time :

59ns

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Turn On Delay Time :

38 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

245

Series :

TrenchMOS™

Power Dissipation-Max :

230W Tc

Fall Time (Typ) :

43 ns

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

120 mJ