PDTA143EMB,315
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- Mfr.Part #
- PDTA143EMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA PDTA143EMB - SMALL
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-XFDFN
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 150mV
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PDTA143
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1μA
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Published :
- 2012
- Transition Frequency :
- 180MHz
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- PNP
- Frequency - Transition :
- 180MHz
- Terminal Position :
- BOTTOM
- Current - Collector (Ic) (Max) :
- 100mA
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -65°C
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Max Power Dissipation :
- 250mW
- Datasheets
- PDTA143EMB,315
PNP 1 Elements 3 Terminations PNP 3-XFDFN Tape & Reel (TR) Surface Mount
PDTA143EMB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 500μA, 10mA.Parts of this part have transition frequencies of 180MHz.During maximum operation, collector current can be as low as 1μA volts.
PDTA143EMB,315 Features
the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
a transition frequency of 180MHz
PDTA143EMB,315 Applications
There are a lot of Nexperia USA Inc.
PDTA143EMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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