PDTA115EU,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Element Configuration :

Single

Polarity :

PNP

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

100 k Ω

Current - Collector Cutoff (Max) :

1μA

Packaging :

Tape and Reel (TR)

Max Collector Current :

20mA

Pin Count :

3

Resistor - Base (R1) :

100 k Ω

Number of Elements :

1

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Base Part Number :

PDTA115

Max Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

PNP - Pre-Biased

Terminal Form :

Gull wing

Number of Terminations :

3

Published :

2004

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V