PDTA114TMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Additional Feature :

BUILT IN BIAS RESISTOR

Number of Terminations :

3

Package / Case :

3-XFDFN

Pin Count :

3

Terminal Position :

BOTTOM

Published :

2007

Transistor Type :

PNP - Pre-Biased

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

250mW

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Element Configuration :

Single

Number of Pins :

3

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Transition Frequency :

180MHz

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Case Connection :

COLLECTOR

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Base Part Number :

PDTA114

Resistor - Base (R1) :

10 k Ω

Frequency - Transition :

180MHz