PDTA114TE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTOR

Power Dissipation-Max (Abs) :

0.15W

Configuration :

SINGLE WITH BUILT-IN RESISTOR

HTS Code :

8541.21.00.95

Pin Count :

3

Current - Collector (Ic) (Max) :

100mA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Power - Max :

150mW

Terminal Position :

Dual

Number of Terminations :

3

Resistor - Base (R1) :

10 k Ω

Published :

2007

Qualification Status :

Not Qualified

Package / Case :

SC-75, SOT-416

Polarity/Channel Type :

PNP

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PDTA114

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

50V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA