P2N2907AZL1G
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- Mfr.Part #
- P2N2907AZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO92
- Stock
- 7,135
- In Stock ：
- 7,135
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- P2N2907
- Packaging :
- Tape and Box (TB)
- Published :
- 2006
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 200MHz
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 10nA
- Current Rating :
- -600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 600mA
- Element Configuration :
- Single
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Terminal Position :
- BOTTOM
- Turn Off Time-Max (toff) :
- 110ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -1.6V
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Pin Count :
- 3
- Max Collector Current :
- 600mA
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time-Max (ton) :
- 50ns
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 200MHz
- hFE Min :
- 75
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -60V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Datasheets
- P2N2907AZL1G
PNP -55°C~150°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
P2N2907AZL1G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
P2N2907AZL1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
P2N2907AZL1G Applications
There are a lot of ON Semiconductor
P2N2907AZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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