P2N2907A

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Mfr.Part #
P2N2907A
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 60V 0.6A TO92
Stock
34,256
In Stock :
34,256

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e0
Number of Elements :
1
Current - Collector (Ic) (Max) :
600mA
RoHS Status :
Non-RoHS Compliant
JESD-30 Code :
O-PBCY-T3
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
No
Current - Collector Cutoff (Max) :
10nA
Power - Max :
625mW
Number of Terminations :
3
Surface Mount :
No
Packaging :
Bulk
Voltage - Collector Emitter Breakdown (Max) :
60V
Terminal Position :
BOTTOM
Transition Frequency :
200MHz
Transistor Application :
AMPLIFIER
HTS Code :
8541.21.00.75
Mounting Type :
Through Hole
Configuration :
Single
Turn Off Time-Max (toff) :
110ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
240
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Base Part Number :
P2N2907
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Polarity/Channel Type :
PNP
Published :
2006
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
0.625W
Terminal Finish :
Tin/Lead (Sn/Pb)
Reach Compliance Code :
not_compliant
Frequency - Transition :
200MHz
Transistor Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
30
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Turn On Time-Max (ton) :
50ns
Pin Count :
3
Datasheets
P2N2907A
Introducing Transistors - Bipolar (BJT) - Single onsemi P2N2907A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:P2N2907, Package / Case:TO-226-3, TO-92-3 (TO-226AA), P2N2907A pinout, P2N2907A datasheet PDF, P2N2907A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi P2N2907A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi P2N2907A


PNP -55°C~150°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

P2N2907A Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 60V maximal voltage - Collector Emitter Breakdown.

P2N2907A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz


P2N2907A Applications


There are a lot of ON Semiconductor
P2N2907A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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