P2N2907ARL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Number of Terminations :

3

Collector Base Voltage (VCBO) :

-60V

Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Current Rating :

-600mA

Number of Elements :

1

Additional Feature :

EUROPEAN PART NUMBER

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Pbfree Code :

yes

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

Frequency :

200MHz

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

200MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Turn On Time-Max (ton) :

50ns

Mount :

Through Hole

RoHS Status :

RoHS Compliant

hFE Min :

75

Voltage - Rated DC :

-60V

Max Power Dissipation :

625mW

Pin Count :

3

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

10nA

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Transistor Type :

PNP

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

P2N2907

Published :

2007

Collector Emitter Voltage (VCEO) :

1.6V

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

-1.6V

Gain Bandwidth Product :

200MHz

Max Collector Current :

600mA