P2N2222AZL1G
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- Mfr.Part #
- P2N2222AZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 48,758
- In Stock ：
- 48,758
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- HTS Code :
- 8541.21.00.75
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 35
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 75V
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Collector Current :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- O-PBCY-T3
- Base Part Number :
- P2N2222
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 285ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 1V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 40V
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 300MHz
- Current Rating :
- 600mA
- Datasheets
- P2N2222AZL1G
NPN -55°C~150°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
P2N2222AZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
P2N2222AZL1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
P2N2222AZL1G Applications
There are a lot of ON Semiconductor
P2N2222AZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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