P2N2222ARL1

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Mfr.Part #
P2N2222ARL1
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 40V 0.6A TO92
Stock
27,168
In Stock :
27,168

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Contains Lead
Published :
2006
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Gain Bandwidth Product :
300MHz
Collector Emitter Breakdown Voltage :
40V
Collector Emitter Saturation Voltage :
1V
Emitter Base Voltage (VEBO) :
6V
Element Configuration :
Single
Max Collector Current :
600mA
Voltage - Rated DC :
40V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Base Part Number :
P2N2222
Current Rating :
600mA
Current - Collector Cutoff (Max) :
10nA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Mount :
Through Hole
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
75V
Max Power Dissipation :
625mW
Pin Count :
3
hFE Min :
35
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
Collector Emitter Voltage (VCEO) :
1V
Reach Compliance Code :
not_compliant
ECCN Code :
EAR99
HTS Code :
8541.21.00.75
Datasheets
P2N2222ARL1
Introducing Transistors - Bipolar (BJT) - Single onsemi P2N2222ARL1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:P2N2222, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, P2N2222ARL1 pinout, P2N2222ARL1 datasheet PDF, P2N2222ARL1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi P2N2222ARL1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi P2N2222ARL1


NPN -55°C~150°C TJ 10nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

P2N2222ARL1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

P2N2222ARL1 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA


P2N2222ARL1 Applications


There are a lot of ON Semiconductor
P2N2222ARL1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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