P2N2907AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

P2N2907

Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

hFE Min :

75

Polarity/Channel Type :

PNP

Breakdown Voltage :

-60V

Turn On Time-Max (ton) :

50ns

Element Configuration :

Single

Collector Emitter Saturation Voltage :

-1.6V

Terminal Position :

BOTTOM

Pbfree Code :

yes

Power Dissipation :

625mW

Collector Base Voltage (VCBO) :

-60V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lifecycle Status :

OBSOLETE (Last Updated: 3 days ago)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mount :

Through Hole

Current - Collector Cutoff (Max) :

10nA

Transistor Type :

PNP

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

625mW

Voltage - Rated DC :

-60V

Current Rating :

-600mA

Number of Elements :

1

Max Collector Current :

600mA

Collector Emitter Voltage (VCEO) :

1.6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Gain Bandwidth Product :

200MHz

Qualification Status :

Not Qualified

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

JESD-609 Code :

e1

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Transistor Application :

AMPLIFIER

Packaging :

Bulk

ECCN Code :

EAR99

Transition Frequency :

200MHz