P2N2907AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

200MHz

Number of Pins :

3

Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

600mA

Voltage - Rated DC :

-60V

Max Power Dissipation :

625mW

Collector Emitter Saturation Voltage :

-1.6V

Published :

2006

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Packaging :

Bulk

Turn On Time-Max (ton) :

50ns

Transistor Type :

PNP

Pin Count :

3

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Breakdown Voltage :

-60V

Number of Elements :

1

Current Rating :

-600mA

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Frequency :

200MHz

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

10nA

Collector Emitter Voltage (VCEO) :

1.6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Polarity/Channel Type :

PNP

hFE Min :

75

Pbfree Code :

yes

Lifecycle Status :

OBSOLETE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Number of Terminations :

3

Base Part Number :

P2N2907

Element Configuration :

Single

Collector Base Voltage (VCBO) :

-60V

Time@Peak Reflow Temperature-Max (s) :

40