P2N2907AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2006

Frequency :

200MHz

Transistor Type :

PNP

Lifecycle Status :

OBSOLETE (Last Updated: 3 days ago)

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Current Rating :

-600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Number of Pins :

3

Qualification Status :

Not Qualified

hFE Min :

75

Collector Base Voltage (VCBO) :

-60V

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Saturation Voltage :

-1.6V

Mount :

Through Hole

Turn On Time-Max (ton) :

50ns

Gain Bandwidth Product :

200MHz

Max Power Dissipation :

625mW

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector Emitter Voltage (VCEO) :

1.6V

Power Dissipation :

625mW

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Max Collector Current :

600mA

Packaging :

Bulk

Mounting Type :

Through Hole

Base Part Number :

P2N2907

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-60V

Current - Collector Cutoff (Max) :

10nA

Pin Count :

3

Transition Frequency :

200MHz

JESD-609 Code :

e1

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Breakdown Voltage :

-60V

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant