P2N2222AZL1

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Mfr.Part #
P2N2222AZL1
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 40V 0.6A TO92
Stock
40,991
In Stock :
40,991

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
600mA
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Max Power Dissipation :
625mW
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
75V
Gain Bandwidth Product :
300MHz
Base Part Number :
P2N2222
Collector Emitter Voltage (VCEO) :
1V
Lead Free :
Contains Lead
RoHS Status :
Non-RoHS Compliant
Collector Emitter Saturation Voltage :
1V
HTS Code :
8541.21.00.75
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Box (TB)
Pin Count :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Emitter Breakdown Voltage :
40V
Current - Collector Cutoff (Max) :
10nA
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
hFE Min :
35
Emitter Base Voltage (VEBO) :
6V
Published :
2006
Transistor Type :
NPN
Mounting Type :
Through Hole
Current Rating :
600mA
Voltage - Rated DC :
40V
Reach Compliance Code :
not_compliant
Element Configuration :
Single
Mount :
Through Hole
Datasheets
P2N2222AZL1
Introducing Transistors - Bipolar (BJT) - Single onsemi P2N2222AZL1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:P2N2222, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, P2N2222AZL1 pinout, P2N2222AZL1 datasheet PDF, P2N2222AZL1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi P2N2222AZL1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi P2N2222AZL1


NPN -55°C~150°C TJ 10nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

P2N2222AZL1 Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 600mA volts is possible.

P2N2222AZL1 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA


P2N2222AZL1 Applications


There are a lot of ON Semiconductor
P2N2222AZL1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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