P2N2907ARL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-1.6V

Peak Reflow Temperature (Cel) :

240

hFE Min :

75

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

1.6V

Terminal Finish :

Tin/Lead (Sn/Pb)

Max Collector Current :

600mA

Transition Frequency :

200MHz

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Turn On Time-Max (ton) :

50ns

Collector Base Voltage (VCBO) :

-60V

Element Configuration :

Single

Number of Terminations :

3

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

200MHz

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

-600mA

Current - Collector Cutoff (Max) :

10nA

Reach Compliance Code :

not_compliant

Mount :

Through Hole

Published :

2006

JESD-30 Code :

O-PBCY-T3

Max Power Dissipation :

625mW

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Voltage - Rated DC :

-60V

Current - Collector (Ic) (Max) :

600mA

Number of Elements :

1

Pin Count :

3

Collector Emitter Breakdown Voltage :

60V

Base Part Number :

P2N2907

Mounting Type :

Through Hole

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Turn Off Time-Max (toff) :

110ns

Additional Feature :

EUROPEAN PART NUMBER

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V