NTHD5904T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Vgs(th) (Max) @ Id :

600mV @ 250μA

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 N-Channel (Dual)

DS Breakdown Voltage-Min :

20V

Surface Mount :

yes

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-C8

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Drain-source On Resistance-Max :

0.075Ohm

Drain Current-Max (Abs) (ID) :

3.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.1A, 4.5V

Pbfree Code :

yes

RoHS Status :

Non-RoHS Compliant

Number of Elements :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Power - Max :

1.1W

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Terminal Form :

C BEND

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.1A

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8