NTHD3101FT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

13A

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

80m Ω @ 3.2A, 4.5V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.2A

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

3.2A Tj

Number of Elements :

1

Power Dissipation-Max :

1.1W Ta

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Power Dissipation :

1.1W

Voltage - Rated DC :

-20V

Terminal Finish :

Tin (Sn)

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 10V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

P-Channel

Fall Time (Typ) :

12.4 ns

Terminal Form :

C BEND

FET Feature :

Schottky Diode (Isolated)

Pin Count :

8

Package / Case :

8-SMD, Flat Lead

Rise Time :

11.7ns

Current Rating :

-4.4A

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Turn-Off Delay Time :

16 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-20V