NTHD3100CT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 10V

Continuous Drain Current (ID) :

3.2A

Pin Count :

8

FET Feature :

Logic Level Gate

Number of Pins :

8

Turn-Off Delay Time :

16 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SMD, Flat Lead

Power Dissipation :

1.1W

Current Rating :

3.9A

Current - Continuous Drain (Id) @ 25°C :

2.9A 3.2A

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Transistor Application :

SWITCHING

Number of Terminations :

8

Published :

2006

Terminal Form :

C BEND

Base Part Number :

NTHD3100C

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 4.5V

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

ECCN Code :

EAR99

Voltage - Rated DC :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Dual

Rise Time :

11.7ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Pulsed Drain Current-Max (IDM) :

12A

JESD-609 Code :

e3

Fall Time (Typ) :

11.7 ns

Drain Current-Max (Abs) (ID) :

2.9A

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Number of Elements :

2

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

1.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON