NTHD3133PFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Power Dissipation-Max :

1.1W Ta

Terminal Position :

Dual

FET Feature :

Schottky Diode (Isolated)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3.2A Tj

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

80m Ω @ 3.2A, 4.5V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Elements :

1

Package / Case :

8-SMD, Flat Lead

JESD-30 Code :

R-XDSO-C8

Surface Mount :

yes

Drain-source On Resistance-Max :

0.08Ohm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

P-Channel

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 10V

Drain Current-Max (Abs) (ID) :

3.2A

Pin Count :

8

Vgs (Max) :

±8V

Number of Terminations :

8