NTHD2102PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.1W

Power Dissipation :

1.1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

58m Ω @ 3.4A, 4.5V

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Package / Case :

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

3.4A

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-3.4A

Number of Elements :

2

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 2.5V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-8V

Input Capacitance (Ciss) (Max) @ Vds :

715pF @ 6.4V

Number of Pins :

8

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Terminations :

8

Rise Time :

20ns

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Reach Compliance Code :

Unknown

Turn-Off Delay Time :

20 ns

Published :

2004

Continuous Drain Current (ID) :

4.6A

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pbfree Code :

yes

Base Part Number :

NTHD2102P

Pin Count :

8

Voltage - Rated DC :

-8V