NTHD2102PT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 2.5V

Terminal Form :

C BEND

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

8V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

1.1W

Rds On (Max) @ Id, Vgs :

58m Ω @ 3.4A, 4.5V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

240

Pulsed Drain Current-Max (IDM) :

4.6A

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

8V

Number of Terminations :

8

Mounting Type :

Surface Mount

JESD-30 Code :

R-XDSO-C8

Package / Case :

8-SMD, Flat Lead

FET Type :

2 P-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

TIN LEAD

Current - Continuous Drain (Id) @ 25°C :

3.4A

Pin Count :

8

Drain Current-Max (Abs) (ID) :

3.4A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.058Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

715pF @ 6.4V

Reach Compliance Code :

Unknown

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ