NTHD2110TT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

12V

Power Dissipation-Max :

1.1W Ta

Pbfree Code :

yes

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

40m Ω @ 6.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Terminal Form :

C BEND

Package / Case :

8-SMD, Flat Lead

Drain Current-Max (Abs) (ID) :

4.5A

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Qualification Status :

COMMERCIAL

Surface Mount :

yes

JESD-30 Code :

R-PDSO-C8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Terminations :

8

Reach Compliance Code :

Unknown

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.072pF @ 6V

Drain-source On Resistance-Max :

0.04Ohm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

850mV @ 250μA