NTHD3102CT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

16A

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

7.2 ns

Power Dissipation :

600mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

1.1W

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tape and Reel (TR)

Published :

2005

Drain-source On Resistance-Max :

0.045Ohm

Pbfree Code :

yes

Number of Elements :

2

Package / Case :

8-SMD, Flat Lead

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Current Rating :

5.5A

Max Power Dissipation :

600mW

Factory Lead Time :

7 Weeks

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4A 3.1A

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

-20V

Drain Current-Max (Abs) (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Base Part Number :

NTHD3102C

Number of Pins :

8

Voltage - Rated DC :

20V

Threshold Voltage :

400mV

Height :

1.1mm

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Element Configuration :

Dual

Surface Mount :

yes

Fall Time (Typ) :

16.9 ns

Weight :

4.535924g

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 4.5V

FET Type :

N and P-Channel

Rise Time :

16.9ns

Width :

1.7mm

Pin Count :

8

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.4A, 4.5V

REACH SVHC :

No SVHC

Terminal Form :

C BEND

JESD-609 Code :

e3

Continuous Drain Current (ID) :

5.5A

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 10V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

15.7 ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Length :

3.1mm