NTHD5903T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.155Ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.2A

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XDSO-C8

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

Power - Max :

1.1W

DS Breakdown Voltage-Min :

20V

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

20V

Pin Count :

8

Reach Compliance Code :

Unknown

Number of Terminations :

8

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

600mV @ 250μA

FET Feature :

Logic Level Gate

Surface Mount :

yes

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

2.2A

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

155m Ω @ 2.2A, 4.5V

Pbfree Code :

No