NTHD4502NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Power Dissipation :

1.13W

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Weight :

4.535924g

Drain to Source Breakdown Voltage :

-20V

Width :

1.7mm

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Packaging :

Tape and Reel (TR)

Resistance :

80mOhm

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

30V

Terminal Form :

C BEND

Fall Time (Typ) :

5.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 15V

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Transistor Application :

SWITCHING

Turn On Delay Time :

7.8 ns

Lead Free :

Lead Free

Package / Case :

8-SMD, Flat Lead

Base Part Number :

NTHD4502N

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

640mW

Factory Lead Time :

2 Weeks

Number of Pins :

8

Terminal Finish :

Tin (Sn)

Current Rating :

2.9A

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Surface Mount :

yes

Element Configuration :

Dual

Continuous Drain Current (ID) :

3.9A

Number of Elements :

2

Published :

2005

Turn-Off Delay Time :

14.9 ns

Length :

3.1mm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.2A

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Rise Time :

5.4ns

Mounting Type :

Surface Mount