NTHD4502NT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

FET Type :

2 N-Channel (Dual)

Pin Count :

8

Current Rating :

2.9A

Length :

3.1mm

Package / Case :

8-SMD, Flat Lead

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Rise Time :

5.4ns

Gate to Source Voltage (Vgs) :

20V

Weight :

4.535924g

Transistor Application :

SWITCHING

Resistance :

80mOhm

Base Part Number :

NTHD4502N

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.9A

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.2A

Voltage - Rated DC :

30V

Power Dissipation :

1.13W

Max Power Dissipation :

640mW

Surface Mount :

yes

Fall Time (Typ) :

5.4 ns

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

14.9 ns

Terminal Form :

C BEND

Turn On Delay Time :

7.8 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

1.7mm

Element Configuration :

Dual

Number of Pins :

8

Mounting Type :

Surface Mount

Height :

1.1mm

Published :

2005

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant