NTHD4401PT3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

NTHD4401P

Max Power Dissipation :

1.1W

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

ECCN Code :

EAR99

Published :

2005

Drain to Source Breakdown Voltage :

-20V

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Current Rating :

-3A

Rise Time :

13ns

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Terminal Form :

C BEND

Power Dissipation :

1.1W

Package / Case :

8-SMD, Flat Lead

Terminal Finish :

Tin (Sn)

Pin Count :

8

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Fall Time (Typ) :

13 ns

Drain-source On Resistance-Max :

0.155Ohm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Rds On (Max) @ Id, Vgs :

155m Ω @ 2.1A, 4.5V

Feedback Cap-Max (Crss) :

50 pF

Number of Elements :

2

Lead Free :

Contains Lead

FET Type :

2 P-Channel (Dual)

Voltage - Rated DC :

20V

Turn-Off Delay Time :

33 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2.1A

Pbfree Code :

yes

Number of Pins :

8

Number of Terminations :

8

FET Feature :

Logic Level Gate