NTE293

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 25 V

FET Feature :

-

Manufacturer :

NTE Electronics

Package :

Bag

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

180mOhm @ 6.4A, 40V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

73W (Tc)

Technology :

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs :

58 nC @ 10 V

Product Status :

Active

Package / Case :

TO-3P-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

12.8A (Tc)

Supplier Device Package :

TO-3PML

FET Type :

N-Channel

Vgs (Max) :

±30V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

200 V

Mounting Type :

Through Hole

Series :

-