NTE287H
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- Mfr.Part #
- NTE287H
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92
- Stock
- 324
- In Stock ：
- 324
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 200MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- Product Status :
- Active
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Package :
- Bag
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Supplier Device Package :
- TO-92
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Manufacturer :
- NTE Electronics
- Power - Max :
- 625 mW
- Operating Temperature :
- 150°C (TJ)
- Current - Collector (Ic) (Max) :
- 500 mA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA, 10V
- Series :
- -
- Datasheets
- NTE287H
NPN 150°C (TJ) 50nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
NTE287H Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 30mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 350 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
NTE287H Features
the DC current gain for this device is 30 @ 30mA, 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the supplier device package of TO-92
NTE287H Applications
There are a lot of NTE Electronics, Inc
NTE287H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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