NTE275

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Mfr.Part #
NTE275
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO66
Stock
62
In Stock :
62

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
O-MBFM-P2
Frequency - Transition :
-
DC Current Gain-Min (hFE) :
100
Voltage - Collector Emitter Breakdown (Max) :
80 V
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Package / Case :
TO-213AA, TO-66-2
Terminal Form :
PIN/PEG
Transistor Element Material :
SILICON
Series :
-
Current - Collector Cutoff (Max) :
500μA
Transistor Type :
PNP - Darlington
Reach Compliance Code :
Unknown
Number of Elements :
1
Power Dissipation-Max (Abs) :
50 W
Configuration :
Single
Current - Collector (Ic) (Max) :
4 A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A, 3V
Surface Mount :
No
Terminal Position :
BOTTOM
Product Status :
Active
Mounting Type :
Through Hole
Collector Current-Max (IC) :
4 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power - Max :
50 W
Package Shape :
Round
Package :
Bag
Polarity/Channel Type :
PNP
Collector-Emitter Voltage-Max :
80 V
Subcategory :
Other Transistors
Operating Temperature :
-65°C ~ 200°C (TJ)
Number of Terminals :
2
Power Dissipation Ambient-Max :
50 W
Qualification Status :
Not Qualified
Supplier Device Package :
TO-66
ECCN Code :
EAR99
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-66
Manufacturer :
NTE Electronics
Datasheets
NTE275
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE275 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-213AA, TO-66-2, Mounting Type:Through Hole, Operating Temperature:-65°C ~ 200°C (TJ), NTE275 pinout, NTE275 datasheet PDF, NTE275 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE275 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE275


PNP - Darlington -65°C ~ 200°C (TJ) 500μA 1 Elements SILICON PNP TO-213AA, TO-66-2 Through Hole

NTE275 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A, 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.TO-66 is the supplier device package for this product.In the 80 V setting, the maximum collector-emitter voltage is set.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.

NTE275 Features


the DC current gain for this device is 750 @ 2A, 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of TO-66


NTE275 Applications


There are a lot of NTE Electronics, Inc
NTE275 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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