NTE275
- Mfr.Part #
- NTE275
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO66
- Stock
- 62
- In Stock :
- 62
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MBFM-P2
- Frequency - Transition :
- -
- DC Current Gain-Min (hFE) :
- 100
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Package / Case :
- TO-213AA, TO-66-2
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Series :
- -
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Type :
- PNP - Darlington
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 50 W
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 4 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A, 3V
- Surface Mount :
- No
- Terminal Position :
- BOTTOM
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Collector Current-Max (IC) :
- 4 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 50 W
- Package Shape :
- Round
- Package :
- Bag
- Polarity/Channel Type :
- PNP
- Collector-Emitter Voltage-Max :
- 80 V
- Subcategory :
- Other Transistors
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Number of Terminals :
- 2
- Power Dissipation Ambient-Max :
- 50 W
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-66
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-66
- Manufacturer :
- NTE Electronics
- Datasheets
- NTE275

PNP - Darlington -65°C ~ 200°C (TJ) 500μA 1 Elements SILICON PNP TO-213AA, TO-66-2 Through Hole
NTE275 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A, 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.TO-66 is the supplier device package for this product.In the 80 V setting, the maximum collector-emitter voltage is set.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.
NTE275 Features
the DC current gain for this device is 750 @ 2A, 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of TO-66
NTE275 Applications
There are a lot of NTE Electronics, Inc
NTE275 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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