NTE275

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Manufacturer :

NTE Electronics

Transistor Type :

PNP - Darlington

Number of Terminals :

2

JESD-30 Code :

O-MBFM-P2

Collector Current-Max (IC) :

4 A

Current - Collector (Ic) (Max) :

4 A

Power Dissipation-Max (Abs) :

50 W

Power Dissipation Ambient-Max :

50 W

Configuration :

Single

DC Current Gain-Min (hFE) :

100

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

JEDEC-95 Code :

TO-66

Number of Elements :

1

Operating Temperature :

-65°C ~ 200°C (TJ)

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

Other Transistors

Product Status :

Active

ECCN Code :

EAR99

Package :

Bag

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A, 3V

Package / Case :

TO-213AA, TO-66-2

Collector-Emitter Voltage-Max :

80 V

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Terminal Form :

PIN/PEG

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package Shape :

Round

Power - Max :

50 W

Surface Mount :

No

Frequency - Transition :

-

Supplier Device Package :

TO-66

Series :

-