NTE268

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Mfr.Part #
NTE268
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS NPN DARL 50V 2A TO202
Stock
158
In Stock :
158

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
8 V
Frequency - Transition :
-
Transistor Type :
NPN
Mount :
Through Hole
Current - Collector (Ic) (Max) :
8 A
Power - Max :
45 W
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
1mA
Series :
-
RoHS :
Compliant
Supplier Device Package :
TO-3P(H)IS
Voltage - Collector Emitter Breakdown (Max) :
800 V
Min Operating Temperature :
-65 °C
Width :
12.7 mm
Package :
Bag
Max Collector Current :
8 A
Package / Case :
TO-3P-3 Full Pack
Weight :
453.59237 mg
Collector Emitter Voltage (VCEO) :
800 V
Height :
6.35 mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
7 @ 500mA, 5V
Manufacturer :
NTE Electronics
Max Operating Temperature :
150 °C
Product Status :
Active
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
3V @ 1.25A, 5A
Length :
44.45 mm
Datasheets
NTE268
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE268 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, Number of Pins:3, NTE268 pinout, NTE268 datasheet PDF, NTE268 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE268 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE268


NPN 150°C (TJ) 1mA TO-3P-3 Full Pack Through Hole

NTE2680 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 7 @ 500mA, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 1.25A, 5A.The emitter base voltage can be kept at 8 V for high efficiency.This product comes in a TO-3P(H)IS device package from the supplier.Device displays Collector Emitter Breakdown (800 V maximal voltage).Single BJT transistor is possible to have a collector current as low as 8 A volts at Single BJT transistors maximum.

NTE2680 Features


the DC current gain for this device is 7 @ 500mA, 5V
the vce saturation(Max) is 3V @ 1.25A, 5A
the emitter base voltage is kept at 8 V
the supplier device package of TO-3P(H)IS


NTE2680 Applications


There are a lot of NTE Electronics, Inc
NTE2680 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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