NTE266

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

1.33 W

Package Shape :

RECTANGULAR

Series :

-

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

13 V

Max Collector Current :

1 A

Collector-Emitter Voltage-Max :

50 V

Package / Case :

TO-202 Long Tab

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 500μA, 500mA

Frequency - Transition :

75MHz

Collector Current-Max (IC) :

0.5 A

Current - Collector (Ic) (Max) :

500 mA

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

RoHS :

Compliant

Number of Terminals :

3

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

50 V

Power Dissipation Ambient-Max :

6.25 W

Qualification Status :

Not Qualified

Package :

Bag

Collector Emitter Voltage (VCEO) :

50 V

Mount :

Through Hole

Transistor Type :

NPN - Darlington

Product Status :

Active

Voltage - Collector Emitter Breakdown (Max) :

50 V

JEDEC-95 Code :

TO-202

Number of Pins :

3

DC Current Gain-Min (hFE) :

40000

Power Dissipation-Max (Abs) :

6.2 W

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

40000 @ 200mA, 5V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Surface Mount :

No

Supplier Device Package :

TO-202

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Collector Cutoff (Max) :

500nA