NTE2593

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Polarity :

NPN

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-220

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Collector Current (DC) :

0.01(A)

DC Current Gain :

10@500UA@5V

Power Dissipation-Max (Abs) :

2 W

Product Status :

Active

Collector-Emitter Voltage-Max :

2100 V

Frequency :

6(MHz)

Reach Compliance Code :

Unknown

Emitter-Base Voltage :

5(V)

Transistor Type :

NPN

Mounting Type :

Through Hole

Subcategory :

Other Transistors

Package Shape :

RECTANGULAR

Collector-Base Voltage :

2100(V)

Vce Saturation (Max) @ Ib, Ic :

5V @ 200μA, 1mA

Series :

-

Category :

Bipolar Power

Current - Collector Cutoff (Max) :

1µA (ICBO)

Case Connection :

Isolated

Operating Temperature :

150°C (TJ)

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Transistor Application :

SWITCHING

Rad Hardened :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500μA, 5V

Frequency - Transition :

6MHz

JEDEC-95 Code :

TO-220AB

Power - Max :

2 W

Voltage - Collector Emitter Breakdown (Max) :

2.1 kV

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

Number of Terminals :

3

Current - Collector (Ic) (Max) :

10 mA

Power Dissipation :

2(W)

Output Power :

Not Required(W)

Collector Current-Max (IC) :

0.01 A

Operating Temp Range :

-55C to 150C

Operating Temperature Classification :

Military

DC Current Gain-Min (hFE) :

10

Terminal Position :

Single

Number of Elements :

1

Package / Case :

TO-220-3

Terminal Form :

THROUGH-HOLE

Configuration :

Single

ECCN Code :

EAR99

Package :

Bag